The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Sep. 26, 2022
International Business Machines Corporation, Armonk, NY (US);
Somnath Ghosh, Clifton Park, NY (US);
Fee Li Lie, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Kisik Choi, Watervliet, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An approach to form a semiconductor structure with a plurality of buried power rails in a semiconductor substrate where at least one buried power rail extends below the backside of the semiconductor substrate. The semiconductor structure provides at least one portion of the first metal layer of the backside power delivery network that surrounds a bottom portion of the buried power rail below the backside of the semiconductor substrate. The bottom portion of the buried power rail is in direct contact with the portion of the first metal layer of the backside power delivery network where the buried power rail and the first metal layer are composed of the same conductive material. The semiconductor structure includes a portion of an interlayer dielectric material isolating the first metal layer of the backside power distribution network from the backside of the semiconductor substrate.