The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Dec. 28, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sagarika Mukesh, Albany, NY (US);

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Robert Robison, Rexford, NY (US);

Ruqiang Bao, Niskayuna, NY (US);

Ardasheir Rahman, Schenectady, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 21/7682 (2013.01); H01L 21/76834 (2013.01); H01L 21/76837 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 23/53295 (2013.01); H01L 21/76885 (2013.01); H01L 21/76897 (2013.01);
Abstract

Embodiments of the present disclosure provide a semiconductor structure including a first metal contact, where at least a portion of the first metal contact extends vertically from a substrate to a top portion of the semiconductor structure. The first metal contact having an exposed surface at the top portion of the semiconductor structure. A dielectric cap may be configured around the first metal contact. The dielectric cap is configured to electrically separate a first area of the semiconductor structure from a second area of the semiconductor structure. The first area of the semiconductor structure includes the first metal contact.


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