The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jun. 07, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Guo-Huei Wu, Tainan, TW;
Chi-Yu Lu, New Taipei, TW;
Ting-Yu Chen, Hsinchu, TW;
Li-Chun Tien, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes a first set of active areas extending in a first direction and separated from each other along a second direction in a cell; first and second gate s that cross the first set of active areas along the second direction, the first gate being shared by a first transistor of a first type and a second transistor of a second type and the second gate being shared by a third transistor of the first type and a fourth transistor of the second type; and a set of conductive lines arranged in three metal tracks in the cell and coupling at least one of terminals of the first to fourth transistors to another one of the terminals of the first to fourth transistor. The first transistor is turned off to electrically disconnect a source/drain terminal of the first transistor from a source/drain terminal of the fourth transistor.