The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Jun. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Hsin Yang, Hsinchu, TW;

Yen-Ming Chen, Hsin-Chu County, TW;

Dian-Hau Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H01L 21/308 (2006.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H01L 21/3081 (2013.01); H10D 62/126 (2025.01);
Abstract

Semiconductor structures and fabrication processes are provided. A semiconductor according to the present disclosure includes a first region including a first fin, a second fin, and a third fin extending along a first direction, and a second region abutting the first region. The second region includes a fourth fin and a fifth fin extending along the first direction. The first fin is aligned with the fourth fin and the second fin is aligned with the fifth fin. The third fin terminates at an interface between the first region and the second region.


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Yang, Chih-Hsin. (2026). Active region patterning (U.S. Patent No. 12568681). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12568681

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