The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Mar. 29, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Dechao Guo, Niskayuna, NY (US);

Kisik Choi, Watervliet, NY (US);

Oleg Gluschenkov, Tannersville, NY (US);

Shogo Mochizuki, Mechanicville, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); B82Y 10/00 (2011.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/118 (2025.01); H01L 23/481 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01);
Abstract

A first and a second nanosheet stack, a first source drain to the first nanosheet stack, a carrier wafer bonded to an upper surface, a bottom source drain contact located on a bottom surface of the first source drain, an epitaxial region between the bottom source drain contact and the first source drain, a second source drain adjacent to the second nanosheet stack and a top source drain contact located on an upper surface of the second source drain, the bottom source drain contact and the top source drain contact on opposite sides. Forming a first and a second nanosheet stack, forming an upper top source drain contact to first source drain adjacent to the first nanosheet stack, bonding a carrier wafer to an upper surface and forming a bottom source drain contact to a lower horizontal surface of a second source drain adjacent to the second nanosheet stack.


Find Patent Forward Citations

Xie, Ruilong. (2026). Self-aligned backside trench epitaxy for low contact resistivity (U.S. Patent No. 12568661). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12568661

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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