The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Mar. 31, 2022
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Jia Rui Thong, Singapore, SG;

Jianxun Sun, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); H10N 70/021 (2023.02); H10N 70/841 (2023.02);
Abstract

The disclosed subject matter relates generally to memory devices and a method of forming the same. More particularly, the present disclosure relates to three terminal resistive random-access (ReRAM) memory structures having two bottom electrodes and one top electrode. The present disclosure provides a structure including a first bottom electrode having an upper surface, a second bottom electrode having an upper surface, a switching layer on the upper surface of the first electrode and the upper surface of the second electrode, an oxygen enhancement layer on the switching layer, and a top electrode on the oxygen enhancement layer, the top electrode is positioned above the first bottom electrode and the second bottom electrode.


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