The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Apr. 12, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventor:
Hui-Lin Wang, Taipei City, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 61/00 (2023.02);
Abstract
A semiconductor memory device includes a substrate, a first interlayer dielectric layer on the substrate, a second interlayer dielectric layer on the first interlayer dielectric layer, a via positioned in the second interlayer dielectric layer in the memory region, and a data storage structure stacked on the via. The second interlayer dielectric layer has a first minimum thickness in the memory region and a second minimum thickness in the logic circuit region, wherein the difference between the first minimum thickness and the second minimum thickness is less than or equal to 150 angstroms.