The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Feb. 04, 2021
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Yu Cao, Saratoga, CA (US);

Jun Tao, Cupertino, CA (US);

Quan Zhang, San Jose, CA (US);

Yongsheng Shu, San Jose, CA (US);

Wei-Chun Fong, Sunnyvale, CA (US);

Assignee:

ASML NETHERLANDS, Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/36 (2012.01); G03F 7/00 (2006.01); G06F 30/27 (2020.01); G06F 30/398 (2020.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G03F 7/70441 (2013.01); G06F 30/27 (2020.01); G06F 30/398 (2020.01);
Abstract

A method for determining a mask pattern and a method for training a machine learning model. The method for determining a mask pattern includes obtaining, via executing a model using a target pattern to be printed on a substrate as an input pattern, a post optical proximity correction (post-OPC) pattern; determining, based on the post-OPC pattern, a simulated pattern that will be printed on the substrate; and determining the mask pattern based on a difference between the simulated pattern and the target pattern. The determining of the mask pattern includes modifying, based on the difference, the input pattern inputted to the model such that the difference is reduced; and executing, using the modified input pattern, the model to generate a modified post-OPC pattern from which the mask pattern can be derived.


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