The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Mar. 30, 2023
Applicants:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Stmicroelectronics International N.v., Geneva, CH;

Inventors:

Siddhartha Dhar, Grenoble, FR;

Frederic Gianesello, Saint Jeoire Prieuré, FR;

Philippe Cathelin, Laval, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 2223/6616 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/1306 (2013.01);
Abstract

The present disclosure is directed to conductive structures that may be utilized in a radio-frequency (RF) switch. The embodiments of the conductive structures of the present disclosure are formed to balance the 'on' resistance (R) and the “off” capacitance (C) such that the R·Cvalue is optimized such that the conductive structures are relatively efficient as compared to conventional conductive structures within conventional RF switches. For example, the conductive structures include various metallization layers that are stacked on each other and spaced apart in a selected manner to balance the Rand the Cas to optimize the R·Cfigure of merit as a lower R·Cis preferred.


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