Power via with reduced resistance

Abstract

An apparatus and method for efficiently routing power signals across a semiconductor die. In various implementations, an integrated circuit includes, at a first node that receives a power supply reference, a first micro through silicon via (TSV) that traverses through a silicon substrate layer to a backside metal layer. The integrated circuit includes, at a second node that receives the power supply reference, a second micro TSV that physically contacts at least one source region. The integrated circuit includes a first power rail that connects the first micro TSV to the second micro TSV. This power rail replaces contacts between the micro TSVs and a second power rail such as the frontside metal zero (M0) layer. Each of the first power rail, the second power rail, and the backside metal layer provides power connection redundancy that increases charge sharing, improves wafer yield, and reduces voltage droop.