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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12563990 B1

PDFFull Text
Date of Patent:
Feb. 24, 2026

Filed:

Dec. 28, 2022

Densification and reduction of selectively deposited si protective layer for mask selectivity improvement in har etching

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Jinying Lin, Albany, NY (US);

Minjoon Park, Albany, NY (US);

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/30655 (2013.01); H01L 21/3081 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/321 (2013.01); H01L 21/32139 (2013.01);
Abstract

Methods for the fabrication of semiconductor devices are disclosed. A method may include depositing a mask layer on a substrate, forming a protection layer on the mask layer, and modifying the protection layer such that a porosity of the protection layer is reduced. Modifying the protection layer may include densifying the protection layer. Modifying the protection layer may include reducing the protection layer using a hydrogen plasma. The method may include etching the protection layer and the substrate. Etching may include etching, forming the protection layer, and modifying the protection layer in a predetermined number of cycles.

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Lin, Jinying. (2026). Densification and reduction of selectively deposited si protective layer for mask selectivity improvement in har etching (U.S. Patent No. 12563990). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12563990

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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