The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Feb. 14, 2022
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Jeffrey Lille, Sunnyvale, CA (US);
Joyeeta Nag, San Jose, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Assignee:
Sandisk Technologies, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 5/08 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 5/08 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract
A method of forming a magnetoresistive random access memory (MRAM) device includes providing a first die containing a selector material layer located over a first substrate, providing a second die containing a MRAM layer stack located over a second substrate, and bonding the first die to the second die.