The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Mar. 17, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Zhaoyao Zhan, Singapore, SG;

Qianwei Ding, Singapore, SG;

Xiaohong Jiang, Singapore, SG;

Ching Hwa Tey, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); H01L 27/146 (2006.01); H10K 39/32 (2023.01); H10K 85/50 (2023.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H10K 85/50 (2023.02);
Abstract

The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode. located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer.


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