The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Jun. 14, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Martin F. Schubert, Mountain View, CA (US);

Vladimir Odnoblyudov, Eagle, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/00 (2025.01); H05B 44/00 (2022.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 29/10 (2025.01); F21V 23/00 (2015.01); F21Y 115/10 (2016.01); H05B 45/00 (2022.01);
U.S. Cl.
CPC ...
H10H 20/062 (2025.01); H05B 44/00 (2022.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 29/10 (2025.01); F21V 23/003 (2013.01); F21Y 2115/10 (2016.08); H05B 45/00 (2020.01);
Abstract

Various embodiments of solid state transducer ('SST') devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.


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