The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Mar. 27, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Sheng-Jier Yang, Hsinchu, TW;

Tai-Hsin Chiu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/68 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01); H10D 89/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 64/685 (2025.01); H10D 30/024 (2025.01); H10D 30/6217 (2025.01); H10D 30/794 (2025.01); H10D 64/017 (2025.01); H10D 64/519 (2025.01); H10D 64/665 (2025.01); H10D 64/667 (2025.01); H10D 64/671 (2025.01); H10D 89/10 (2025.01); H10D 84/014 (2025.01); H10D 84/0142 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device includes an active region spanning along a first direction. The semiconductor device includes a first elongated gate spanning along a second direction substantially perpendicular to the first direction. The first elongated gate includes a first portion that is disposed over the active region and a second portion that is not disposed over the active region. The first portion and the second portion include different materials. The semiconductor device includes a second elongated gate spanning along the second direction and separated from the first elongated gate in the first direction. The second elongated gate includes a third portion that is disposed over the active region and a fourth portion that is not disposed over the active region. The third portion and the fourth portion include different materials.


Find Patent Forward Citations

Yang, Sheng-Jier. (2026). Device and method for tuning threshold voltage by implementing different work function metals in different segments of a gate (U.S. Patent No. 12563814). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12563814

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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