The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Oct. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventor:

Han-Jong Chia, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); G11C 11/22 (2006.01); H01L 21/02 (2006.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10D 30/701 (2025.01); G11C 11/223 (2013.01); H01L 21/0228 (2013.01); H10D 62/115 (2025.01); H10D 64/021 (2025.01); H10D 64/689 (2025.01); H10D 64/691 (2025.01);
Abstract

Various embodiments of the present disclosure are directed towards an integrated chip including a switching layer over a semiconductor substrate. The switching layer comprises a first metal oxide. An upper conductive structure overlies the switching layer. The switching layer is spaced between opposing sidewalls of the upper conductive structure. A first dielectric layer is disposed along opposing sidewalls of the switching layer. The first dielectric layer comprises a second metal oxide different from the first metal oxide. A top surface of the switching layer and a top surface of the first dielectric layer directly underlie a bottom surface of the upper conductive structure.


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