The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Feb. 28, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Marcus Johannes Henricus Van Dal, Linden, BE;
Gerben Doornbos, Kessel-Lo, BE;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a power switch circuit and a logic circuit. The semiconductor device includes a first dielectric layer and a thin film transistor (TFT) formed on the first dielectric layer. The TFT includes a semiconductor nano-sheet, a gate dielectric layer wrapping around a channel region of the semiconductor nano-sheet, and a gate electrode layer formed on the gate dielectric layer. The semiconductor nano-sheet is made of an oxide semiconductor material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile