The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Mar. 30, 2023
United Microelectronics Corp., Hsinchu, TW;
Yu-Hsiang Shu, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
Provided are a power MOSFET and a manufacturing method thereof. The power MOSFET includes a substrate, base, doped and drift regions, a gate structure, an insulating layer, a conductive layer, a source electrode and a drain electrode. The base region is in the substrate and adjacent to a first surface of the substrate. The doped region is in the base region and adjacent to the first surface. The drift region is under the base region. The gate structure is in the substrate and includes first and second portions. The first portion is located in the drift region. The second portion is located in the doping, base and drift regions. The insulating layer is disposed between the gate structure and the substrate. The conductive layer surrounds the second portion. The source electrode is connected to the doped region. The drain electrode is disposed on a second surface of the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile