The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Sep. 30, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Meng-Chia Lee, Allen, TX (US);

Sunglyong Kim, Allen, TX (US);

Seetharaman Sridhar, Richardson, TX (US);

Sameer Pendharkar, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/60 (2025.01); H10D 30/63 (2025.01); H10D 30/66 (2025.01);
U.S. Cl.
CPC ...
H10D 30/611 (2025.01); H10D 30/63 (2025.01); H10D 30/668 (2025.01);
Abstract

An integrated circuit includes an epitaxial layer over a semiconductor substrate. The epitaxial layer has a first conductivity type and a top surface. First, second and third trenches are located in the epitaxial layer. The trenches respectively include first, second and third field plates. First and second body members are located within the epitaxial layer and have a different second conductivity type. The first body member is located between the first and second trenches, and the second body member is located between the second and third trenches. The first body member extends a first distance between the top surface and the substrate, and the second body member extends a lesser second distance between the top surface and the substrate.


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