The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Jan. 17, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Hsin-Ming Hou, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A complementary high electron mobility transistor includes an N-type HEMT and an P-type HEMT disposed on the substrate. The N-type HEMT includes a first undoped gallium nitride layer, a first quantum confinement channel, a first undoped group III-V nitride compound layer and an N-type group III-V nitride compound layer disposed from bottom to top. A first gate is disposed on the N-type group III-V nitride compound layer. A first source and a first drain are disposed at two sides of the first gate. The P-type HEMT includes a second undoped gallium nitride layer, a second quantum confinement channel, a second undoped group III-V nitride compound layer and a P-type group III-V nitride compound layer disposed from bottom to top. A second gate is disposed on the P-type group III-V nitride compound layer. A second source and a second drain are disposed at two sides of the second gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile