The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Sep. 04, 2023
Applicant:

Monolithic 3d Inc., Klamath Falls, OR (US);

Inventors:

Zvi Or-Bach, Haifa, IL;

Jin-Woo Han, San Jose, CA (US);

Brian Cronquist, Klamath Falls, OR (US);

Assignee:

Monolithic 3D Inc., Klamath Falls, OR (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 80/00 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H10B 80/00 (2023.02); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 24/80 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/06131 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80896 (2013.01);
Abstract

A 3D device including: a first level including first transistors and a first interconnect; a second level including second transistors, the second level overlaying the first level; and at least four electronic circuit units (ECUs), where each of the ECUs include a first circuit, the first circuit including a portion of the first transistors, where each of the ECUs includes a second circuit, the second circuit including a portion of the second transistors, where each of the ECUs includes a first vertical bus, where the first vertical bus provides electrical connections between the first circuit and the second circuit, where each of the ECUs includes at least one processor and at least one memory array, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonding regions and metal to metal bonding regions.


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