The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Aug. 16, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Qinghua Han, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The manufacturing method includes the following operations. A substrate is provided, and a first groove and a second groove are formed in the substrate, each of the first groove and the second groove having a depth in a first direction. The first groove includes multiple first sub-grooves arranged in the first direction, the second groove includes multiple second sub-grooves arranged in the first direction, and sidewalls of the first sub-grooves and sidewalls of the second sub-grooves are convex outwards. Word lines protruding away from the first groove each are formed at an interface of adjacent first sub-grooves. First source-drain layers formed on the sidewalls of the first sub-grooves, and second source-drain layers protruding away from the second groove each are formed at an interface of adjacent second sub-grooves.