The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Oct. 29, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tzung-Yo Hung, Chiayi County, TW;

Pin-Dai Sue, Tainan, TW;

Chien-Chi Tien, Hsinchu, TW;

Ting-Wei Chiang, New Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2006.01); G05F 3/16 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H03K 17/687 (2006.01); H03K 19/0948 (2006.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01); H10D 84/03 (2025.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H03K 17/6872 (2013.01); G05F 3/16 (2013.01); H01L 21/02104 (2013.01); H01L 21/283 (2013.01); H03K 19/018571 (2013.01); H03K 19/0948 (2013.01); H10D 62/119 (2025.01); H10D 64/311 (2025.01); H10D 84/038 (2025.01); B82Y 10/00 (2013.01);
Abstract

An integrated circuit device includes: an integrated circuit module; a first field-effect transistor coupled between the integrated circuit module and a first reference voltage, and controlled by a first control signal; and a second field-effect transistor coupled between the integrated circuit module and the first reference voltage; wherein the second field-effect transistor is a complementary field-effect transistor of the first field-effect transistor, and the first field-effect transistor and the second field-effect transistor are configured to generate a second reference voltage for the integrated circuit module according to the first control signal.


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Hung, Tzung-Yo. (2026). Power switch circuit, ic structure of power switch circuit, and method of forming ic structure (U.S. Patent No. 12562734). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12562734

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