The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Oct. 17, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Wei Huang, Wuhan, CN;

Weiwei He, Wuhan, CN;

Weijun Wan, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 11/4091 (2006.01); G11C 11/4093 (2006.01); G11C 11/4097 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4093 (2013.01); G11C 11/4091 (2013.01); G11C 11/4097 (2013.01);
Abstract

The implementation of the present disclosure discloses a memory and its operation method, a memory system and an electronic device. The memory includes: a memory cell array and a page buffer, the page buffer is disposed corresponding to a bit line of the memory cell array, and the page buffer includes: a precharge and discharge circuit coupled to the bit line through a sense node of the page buffer and including a first type transistor; a plurality of latches respectively coupled to the sense node, wherein at least one of the plurality of latches includes a second type transistor, and a characteristic size of the second type transistor is smaller than that of the first type transistor.


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