The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Aug. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien-Chen Lin, Hsinchu, TW;

Shang Lin Wu, Hsinchu, TW;

Yen Lin Chung, Hsinchu, TW;

Chia-Che Chung, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G11C 5/14 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 5/147 (2013.01); G11C 11/4094 (2013.01);
Abstract

An integrated circuit device includes a first transistor having a first-type channel and a second transistor having a second-type channel at a front side of a substrate. The first transistor is stacked over the second transistor. The integrated circuit device also includes a power line connected to a source terminal of the first transistor. The first transistor has a gate terminal configured to receive a control signal and has a drain terminal connected to both a gate terminal and a drain terminal of the second transistor. The integrated circuit device further includes a memory power line connected to a source terminal of the second transistor and a memory circuit configured to receive a supply voltage from the memory power line.


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