The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Nov. 21, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Win-San Khwa, Taipei, TW;

Meng-Fan Chang, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 7/065 (2013.01); G11C 11/1655 (2013.01); G11C 11/1697 (2013.01);
Abstract

A sensing amplifier of a memory array, a memory device and a data read method with two state reference voltages are provided. The sensing amplifier comprises a sampling circuit, a latch circuit, and a reset circuit. The sampling circuit compares data voltages, a first state reference voltage, and a second state reference voltage according to a bit line pre-charge signal and a word line to generate a first sampling signal on the output node and a second sampling signal on the inverted output node. The latch circuit implements that the first sampling signal and the second sampling signal are inverted signals and latches the first sampling signal on an output node and the second sampling signal on the inverted output node.


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