The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Apr. 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wen-Shun Lo, Hsinchu County, TW;
Jing-Hwang Yang, Zhubei City, TW;
Yingkit Felix Tsui, Cupertino, CA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A waveguide structure and an optical modulator structure of a photonic integrated circuit are formed in a dielectric region above a substrate of a semiconductor device. Openings are then formed through the dielectric region and to the substrate so that material can be removed from the substrate to form air gaps between the substrate and the dielectric region. The openings are then sealed by depositing dielectric material in the openings. Sealing the openings reduces the likelihood of exposure of the dielectric region and other regions of the semiconductor device to exposure to environmental elements such as humidity and oxygen. The reduced likelihood of exposure to these environmental elements, due to sealing the openings, may reduce the likelihood and/or rate of formation of defects in the dielectric region and the other regions of the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile