The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Apr. 11, 2023
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Hans Taddiken, Munich, DE;

Dirk Offenberg, Dresden, DE;

Trinath Reddy Pinnapa, Dresden, DE;

Steffen Rothenhäußer, Dresden, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 71/00 (2025.01); G01S 7/481 (2006.01); G01S 7/4914 (2020.01); H10F 30/222 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
G01S 7/4914 (2013.01); G01S 7/4816 (2013.01); H10F 30/222 (2025.01); H10F 71/1215 (2025.01); H10F 77/147 (2025.01);
Abstract

A time-of-flight sensor includes at least one pixel, including: a Si-based photocurrent collecting structure and a Ge-based photosensitive structure epitaxially grown on the photocurrent collecting structure, wherein the photocurrent collecting structure includes an n-doped region and a p-doped region, wherein the n-doped region is configured to conduct electrons of a photocurrent to at least one n-contact and wherein the p-doped region is configured to conduct holes of the photocurrent to at least one p-contact and wherein the conduction band in the p-doped region includes a barrier for the electrons of the photocurrent and the valence band in the n-doped region includes a barrier for the holes of the photocurrent.


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