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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12557662 B1

PDFFull Text
Date of Patent:
Feb. 17, 2026

Filed:

Jul. 24, 2023

Manufacturing method of semiconductor structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Feng-Wei Kuo, Hsinchu, TW;

Wen-Shiang Liao, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Marlon T Fletcher

Assistant Examiner:

Christina A Sylvia

Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01Q 1/52 (2006.01); H01Q 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01Q 1/52 (2013.01); H01Q 9/0407 (2013.01); H01L 2221/68372 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/214 (2013.01);
Abstract

A method of forming a semiconductor structure includes forming a photoresist over a first conductive pattern. The method further includes patterning the photoresist to define a plurality of first openings. The method further includes depositing a conductive material in each of the plurality of first openings. The method further includes disposing a molding material over the first conductive pattern, wherein the molding material surrounds a die. The method further includes removing a portion of the molding material to form a second opening. The method further includes disposing a dielectric material into the opening to form a dielectric member. The method further includes forming a redistribution structure over the molding material and the dielectric member, wherein the redistribution structure includes an antenna structure over the dielectric member and electrically connected to the die.

Find Patent Forward Citations

Kuo, Feng-Wei. (2026). Manufacturing method of semiconductor structure (U.S. Patent No. 12557662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12557662

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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