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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12557636 B1

PDFFull Text
Date of Patent:
Feb. 17, 2026

Filed:

Feb. 07, 2023

Gate all around backside power rail formation with backside dielectric isolation scheme

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Andrew Yeoh, Portland, OR (US);

Benjamin Colombeau, San Jose, CA (US);

Balasubramanian Pranatharthiharan, San Jose, CA (US);

Ashish Pal, San Ramon, CA (US);

El Mehdi Bazizi, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

SERVILLA WHITNEY LLC

Primary Examiner:

Brian Turner

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/01 (2025.01); H10D 64/018 (2025.01);
Abstract

Semiconductor devices and methods of manufacturing the same are described. The method includes forming distinct and separate bottom dielectric isolation layers underneath the source/drain and underneath the gate of a gate all around device. Selectively remove of the bottom dielectric isolation layer underneath the source/drain results in better backside power rail (BPR) via alignment to the source/drain epi and reduces reliability and gate-shorting problems.

Find Patent Forward Citations

Yeoh, Andrew. (2026). Gate all around backside power rail formation with backside dielectric isolation scheme (U.S. Patent No. 12557636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12557636

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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