The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Oct. 25, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nikhil Jain, Apple Valley, MN (US);

Prabudhya Roy Chowdhury, Albany, NY (US);

Kisik Choi, Watervliet, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H10D 86/0214 (2025.01); H10D 86/441 (2025.01); H10D 86/60 (2025.01); H01L 21/76224 (2013.01);
Abstract

A semiconductor device includes: a channel having layers of silicon separated from each other; a metal gate in contact with the layers of silicon; source/drain regions adjacent to the metal gate; a frontside power rail extending through the layers of silicon; a dielectric separating the frontside power rail from the metal gate; a via-connect buried power rail extending through the dielectric and coupling the frontside power rail to the source/drain regions; and a backside power rail coupled to the frontside power rail. The layers of silicon are wrapped on three sides by the metal gate.


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