The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Mar. 19, 2025
Applicant:

Yield Engineering Systems Inc., Fremont, CA (US);

Inventors:

Sandeep R. Koppikar, Karnataka, IN;

John Lewis, Fremont, CA (US);

Vladimir Kudriavtsev, Palo Alto, CA (US);

Saket Chadda, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G01J 5/00 (2022.01); H01L 21/60 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67248 (2013.01); G01J 5/0007 (2013.01); H01L 21/60 (2021.08); H01L 22/12 (2013.01); H01L 22/24 (2013.01); G01J 2005/0077 (2013.01); H01L 2021/60052 (2013.01);
Abstract

A solder reflow system that includes a vacuum chamber and a sample chuck in the vacuum chamber to support a semiconductor wafer to be processed. The solder reflow system further include a heating element coupled to the vacuum chamber and configured to heat the semiconductor wafer, a thermocouple connected to the sample chuck to measure a temperature of the semiconductor wafer, a pyrometer positioned to detect an optical signal from the semiconductor wafer to estimate the temperature of the semiconductor wafer. The control system is configured to control the heating element to heat the semiconductor wafer, obtain one or more measurements of the temperature of the semiconductor wafer from the thermocouple and one or more estimates of the temperature of the semiconductor wafer from the pyrometer during the heating of the semiconductor wafer, and determine a modification of the heating of the semiconductor wafer based on the obtained measurements.


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