The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Mar. 02, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Sheng-Siang Ruan, Hsinchu, TW;
Chia-Wen Zhong, Hsinchu, TW;
Tzu-Yu Lin, Hsinchu, TW;
Ching Ju Yang, Hsinchu, TW;
Yao-Wen Chang, Hsinchu, TW;
Chin I Wang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H10N 70/8416 (2023.02); H10N 70/023 (2023.02); H10N 70/026 (2023.02); H10N 70/063 (2023.02); H10N 70/245 (2023.02); H10N 70/883 (2023.02); H01J 37/32091 (2013.01); H01J 2237/3321 (2013.01);
Abstract
A semiconductor device that includes a semiconductor substrate, a bottom electrode over the semiconductor substrate, a switching layer over the bottom electrode, a metal ion source layer over the switching layer, and a top electrode over the metal ion source layer. The switching layer includes a compound having aluminum, oxygen, and nitrogen.