The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Aug. 09, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shih-Yu Liao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some implementations described herein provide an optoelectronic device including a multi-layer photodiode structure having multiple sensing structures formed from one or more quantum effect materials (e.g., formed from multiple layers of quantum effect materials). The multiple sensing structures, which include sidewalls that are in contact with a substrate of the optoelectronic device, may be stacked and include overlapping portions. Through use of the multi-layer photodiode structure including the multiple sensing structures, a quantum length is increased relative to another photodiode structure including a single, planar sensing structure formed from a layer of a quantum effect material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile