The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jun. 12, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Han-Chung Chang, Hsinchu, TW;
Kuang-Ching Chang, Hsinchu, TW;
Jia-Hong Gao, Hsinchu, TW;
PO-Chih Cheng, Hsinchu, TW;
Hui-Zhong Zhuang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A cell region of a semiconductor device includes: active regions (ARs) formed as predetermined shapes on a substrate including first and second ARs having a first shape and correspondingly first and second dopant types, a third AR having a second shape and the second dopant type, and a fourth AR having a third shape and the first dopant type. The first and second ARs are arranged in a first area of the cell region. The third and fourth ARs are arranged in a second area of the cell region. The second area is adjacent to the first area relative to a first direction (e.g., Y-axis (vertical adjacency-architecture) or X-axis (horizontal adjacency-architecture)). The first shape is smaller than the second shape. The second shape is smaller than the third shape.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile