The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Jan. 19, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Yuan Chen, Hsinchu, TW;

Huan-Chieh Su, Changhua, TW;

Chih-Hao Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H01L 23/528 (2006.01); H10D 30/00 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6729 (2025.01); H01L 23/5283 (2013.01); H10D 30/0198 (2025.01); H10D 30/43 (2025.01); H10D 30/501 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/01 (2025.01); H10D 64/2565 (2025.01); H10D 84/85 (2025.01);
Abstract

Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed under a well portion, a second source/drain region disposed adjacent the first source/drain region, a dielectric material disposed between the first and second source/drain regions, and a conductive contact having a first portion disposed under the first source/drain region and a second portion disposed adjacent the first source/drain region. The second portion is disposed in the dielectric material. The structure further includes a conductive feature disposed in the dielectric material, and the conductive feature is electrically connected to the conductive contact. The conductive feature has a top surface that is substantially coplanar with a top surface of the well portion.


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