The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Sep. 01, 2023
United Microelectronics Corp., Hsinchu, TW;
Hsuan-Kai Chen, Taichung, TW;
Tun-Jen Cheng, Hsinchu, TW;
Ching-Chung Yang, Hsinchu, TW;
Nien-Chung Li, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Chiu-Te Lee, Hsinchu County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A transistor structure including a substrate, a gate dielectric layer, a gate, a first doped region, a second doped region, a first drift region, and a dummy gate is provided. The gate dielectric layer is located on the substrate. The gate dielectric layer includes first and second portions. The second portion is connected to the first portion. The thickness of the second portion is greater than the thickness of the first portion. The gate is located on the first and second portions. The first doped region and the second doped region are located in the substrate on two sides of the gate dielectric layer. The first drift region is located in the substrate on one side of the gate. The second doped region is located in the first drift region. The dummy gate is located on the second portion between the gate and the second doped region.