The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Sep. 06, 2022
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Chen-Wei Pan, Hsinchu County, TW;

Sheng Cho, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 30/01 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6211 (2025.01); H10D 30/024 (2025.01); H10D 62/151 (2025.01); H10D 84/013 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 88/00 (2025.01);
Abstract

A semiconductor device includes a substrate; a fin structure disposed over the substrate; a gate structure disposed over the substrate, wherein an extension direction of the fin structure intersects an extension direction of the gate structure; and a first well disposed under the gate structure, corresponding to an emitter region of the semiconductor device, and having a first conductivity type, wherein the first well is adjacent to a well block layer, and the well block layer is disposed under the gate structure in the emitter region; wherein the well block layer has a first doping concentration of a well implant, the first well has a second doping concentration of the well implant, and the first doping concentration is less than the second doping concentration.


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