The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
May. 03, 2023
Applicant:
National Yang Ming Chiao Tung University, Hsinchu, TW;
Inventors:
Assignee:
National Yang Ming Chiao Tung University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 64/251 (2025.01);
Abstract
A semiconductor device includes a substrate, a channel layer, a first barrier layer, a source/drain contact, and a gate layer. The channel layer is on the substrate. The first barrier layer is on the channel layer and the thickness of the first barrier layer is less than 6 nm. The source/drain contact is on the first barrier layer and is directly contact with the first barrier layer. The gate layer is over the first barrier layer.