Method for forming semiconductor structure and semiconductor structure

Abstract

A method for forming a semiconductor structure includes that a semiconductor substrate is provided, on which bit line structures and dielectric layers that are formed, in which the bit line structures and the dielectric layers jointly define capacitor contact openings; first conductive layers filling the capacitor contact openings are formed, in which top surfaces of the first conductive layers are lower than top surfaces of the bit line structures; conductive contact layers located on the top surfaces of the first conductive layers are formed, in which a thickness of a first part and/or a thickness of a second part of each conductive contact layer is greater than a thickness of a third part thereof; second conductive layers electrically connected with the conductive contact layer are formed, and are configured to adjust an arrangement mode of capacitor contact structures formed by filling the capacitor contact openings.