Method for forming semiconductor structure and semiconductor structure

Abstract

Embodiments provide a method for forming a semiconductor structure and the semiconductor structure. The method includes: providing a base including bit line trenches extending in a first direction and arranged in a second direction; forming a bit line structure in each bit line trench; and etching the base with bit line structures formed therein to form active areas corresponding to the bit line structures. Each column of the active areas arranged in the first direction includes the active areas extending in a third direction, and the first direction, the second direction and the third direction are positioned in a same plane, and there is a first preset included angle between the second direction and the first direction and a second preset included angle between the third direction and the first direction.