The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Mar. 27, 2023
Ememory Technology Inc., Hsin-Chu, TW;
Wein-Town Sun, Hsinchu County, TW;
Woan-Yun Hsiao, Hsinchu County, TW;
Wei-Ren Chen, Hsinchu County, TW;
Hsueh-Wei Chen, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
A non-volatile memory cell includes a p-type well region, a first n-type doped region, a second n-type doped region, a first gate structure, a second gate structure, a third gate structure and a protecting layer. The first n-type doped region and the second n-type doped region are formed under a surface of the p-type well region. The first gate structure and the second gate structure are formed over the surface of the p-type well region and arranged between the first n-type doped region and the second n-type doped region. A first part of a first gate layer of the first gate structure and the second gate structure are covered by the protecting layer. The third gate structure is formed over the surface of the p-type well region and arranged between the first gate structure and the second gate structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile