The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Aug. 03, 2023
Applicant:

Changxin Memory Technologies, Inc., Anhui, CN;

Inventor:

Yu Yang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 7/22 (2006.01); H03K 5/14 (2014.01);
U.S. Cl.
CPC ...
H03K 5/14 (2013.01); G11C 7/04 (2013.01); G11C 7/222 (2013.01);
Abstract

Delay circuitry includes a temperature compensation control circuit and a delay circuit. The temperature compensation control circuit is configured to generate a target temperature compensation control signal based on an initial control signal, a real-time ambient temperature signal, a temperature coefficient compensation enable signal, and a temperature coefficient control signal. The delay circuit is connected to the temperature compensation control circuit, and is configured to generate a temperature compensated target delay signal based on the target temperature compensation control signal and an initial delay signal such that a delay time of the target delay signal generated by the delay circuit can be dynamically compensated based on a real-time ambient temperature signal collected by a temperature sensor.


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Yang, Yu. (2026). Delay circuit and semiconductor memory (U.S. Patent No. 12556172). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12556172

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