The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jul. 01, 2022
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Chien-Liang Chen, New Taipei, TW;
Shao-Chien Hsu, Hsinchu, TW;
Jung-Wang Lu, Taipei, TW;
Meng-Chang Wu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Methods and systems for dry etching are disclosed. The methods and systems use a showerhead with a perforated plate. The perforated plate includes a primary solid zone having no holes; a first annular zone comprising a first plurality of holes with a first total hole area; a secondary solid zone having no holes; a second annular zone comprising a second plurality of holes with a second total hole area; a third annular zone comprising a third plurality of holes with a third total hole area; and a fourth annular zone comprising a fourth plurality of holes with a fourth total hole area. The third total hole area is greater than the first total hole area and less than the second total hole area, and the fourth total hole area is greater than the second total hole area. Dry etched wafers using these systems have improved edge uniformity and improved yield.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile