The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Nov. 26, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jen-Chieh Liu, Hsinchu, TW;

Hung-Li Chiang, Taipei, TW;

Jui-Jen Wu, Hsinchu, TW;

Win-San Khwa, Taipei, TW;

Yi-Lun Lu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0655 (2013.01); G06F 3/0604 (2013.01); G06F 3/0673 (2013.01);
Abstract

A memory device is provided. The memory device includes: a write transistor, with a gate terminal connected to a write word line, and having a first source/drain terminal connected to a bit line; a storage transistor, with a gate terminal coupled to a second source/drain terminal of the write transistor to form a storage node, and having a first source/drain terminal connected to a source line; and a read transistor, with a gate terminal coupled to a read word line, and having a first source/drain terminal connected to the bit line. The read transistor and the storage transistor share a second source/drain terminal.


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