The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jul. 19, 2024
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventor:
Sangoh Lim, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/061 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01);
Abstract
In certain aspects, a memory device includes an array of memory cells and an input/output (I/O) circuit. The array of memory cells includes N main banks and M redundant banks. Each of N and M is a positive integer, and N is greater than M. The I/O circuit includes a set of write multiplexers (MUXs) respectively coupled to the N main banks and M redundant banks. Each of the N main banks and M redundant banks is coupled to an individual write MUX of the set of write MUXs.
Lim, Sangoh. (2026). Memory device with failed main bank repair using redundant bank (U.S. Patent No. 12554415). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12554415
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile