The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jun. 25, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chan-Hong Chern, Palo Alto, CA (US);
Min-Hsiang Hsu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/136 (2006.01); G02B 6/122 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/1225 (2013.01); G02B 2006/12176 (2013.01);
Abstract
A photonic structure is provided. The photonic structure includes an oxide structure surrounded by a semiconductor substrate, a buried oxide layer over the semiconductor substrate, and an optical coupling region over the buried oxide layer. The oxide structure has a first side surface and a second side surface opposite to the first side surface. In a plan view, the optical coupling region is tapered from the first side surface of the oxide structure to the second side surface of the oxide structure.