The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
May. 24, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Kisik Choi, Watervliet, NY (US);
Junli Wang, Slingerlands, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Abstract
A semiconductor structure includes a front-end-of-line level including a plurality of field effect transistors electrically connected to a back-end-of-line interconnect level located on a first side of the front-end-of-line level. A plurality of shallow trench isolation regions are located between adjacent field effect transistors, each of the plurality of shallow trench isolation regions being surrounded by a dielectric isolation liner. A backside power rail is located within a backside interlayer dielectric located on a second side of the front-end-of-line level opposing the first side of the front-end-of-line level. A via-to-backside power rail embedded, at least in part, within a shallow trench isolation region is located between two field effect transistors of a similar polarity, the via-to-backside power rail is adjacent and electrically connected to at least one metal contact and extends from the at least one metal contact to a first surface of the backside power rail.