The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
May. 22, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jieun Lee, Suwon-si, KR;
Jinpyoung Kim, Suwon-si, KR;
Jieun Song, Suwon-si, KR;
Janghoon Kim, Suwon-si, KR;
Woojin Jung, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B08B 3/08 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); B08B 3/08 (2013.01); H01L 21/027 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); G03F 7/40 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes: forming a pattern formation material layer on a substrate; forming a photoresist on the pattern formation material layer; exposing and developing the photoresist to form a photoresist pattern; performing a first deionized water cleaning on the photoresist pattern; cleaning the photoresist pattern with a cleaning solution including a surfactant; and performing a second deionized water cleaning on the photoresist pattern.