The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Aug. 10, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31122 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/3244 (2013.01); H01J 37/32623 (2013.01); H01J 37/32724 (2013.01); H01L 21/0206 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/6831 (2013.01); H01J 2237/006 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01);
Abstract
The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas.
Yang, Chansyun. (2026). Plasma-assisted etching of metal oxides (U.S. Patent No. 12550648). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550648
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile